ABSTRACT
In this work, we study the pressure dependence of elastic constants of wurtzite indium nitride semiconductor based on Landau free energy expansion. Elastic constants are obtained as functions pressure up to second order. We have also evaluated the bulk modulus (B) and anisotropies of compressibility and shear for wurtzite indium nitride as functions of pressure. Agreement with previously obtained results based on first-principles calculations is found to be satisfactory.
Disclosure statement
The authors declare no conflict of interest, financial or otherwise.