Comparative study of RF sputtered Fe₂O₃- and Fe₃O₄-doped indium saving indium tin oxide thin films

Abstract

In present work the properties of iron-doped indium tin oxide (ITO) films with reduced to 50 mass% indium oxide content prepared by co-sputtering of ITO and Fe₂O₃ targets and ITO and Fe₃O₄ targets in mixed argon–oxygen atmosphere were studied by various methods. The influence of different working gas flow rates, RF power of iron oxide targets, type of doping oxide and heat treatment temperatures on the electrical, optical, structural, and morphological properties of the films was characterized by means of four-point probe method, ultraviolet–visible (UV–Vis) spectroscopy, X-ray diffraction and atomic force microscopy.

Keywords:

• Electrical properties
• iron-doped indium tin oxide
• optical properties
• radio frequency sputtering
• surface roughness

Acknowledgments

The present research was supported by New Energy and Industrial Technology Development Organization (NEDO), Japan. Part of the Fig. 3 was reprinted from Ref. 10 with permission of Elsevier.

Disclosure statement

No potential conflict of interest was reported by the authors.

Additional information

Funding

The present research was supported by New Energy and Industrial Technology Development Organization (NEDO), Japan. Part of the Fig. 3 was reprinted from Ref. 10 with permission of Elsevier.